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CIF Plasma Stripper

Product Parameters

CIF's plasma stripping systems, utilizing inductively coupled isotropic (in all directions) plasma excitation mode, are well-suited for the efficient removal of photoresist from various substrates with intricate geometric shapes. Its visually appealing design, compact structure, and optimized chamber configuration enhance processing capacity, expand application range, and ensure reliable performance and user-friendly operation.
Attribute
Product Name
Model
Manufacturer Nature
Visits
Time
Details
CIF Plasma Stripper
SPB-5/plus
Manufacturer
98次
2024-03-18

Products Details

Function and Features 

The 7-inch color touch screen provides an interactive operation interface that  automatically controls and monitors processing parameters and status. It has the  capability to store and trace up to 20 protocols & process data.

The PLC industrial control computer oversees the entire process of photoresist removal,  offering two operational modes: manual and automatic. 

The quartz vacuum chamber is equipped with a pipeline made of high-quality 316  stainless steel, ensuring excellent corrosion resistance and pollution-free operation.

Quartz carrier is optional for photoresist removal of wafers. 

The plasma cleaning machine adopts a shower-type porous air intake to enhance the  uniformity of single-hole air intake of traditional plasma cleaning machine. Anti-corrosion digital flowmeter control. Dual gas paths are provided as a standard  feature to ensure a more even distribution of gases. The compatible gases include  oxygen, argon, nitrogen, carbon tetrafluoride, hydrogen, and gas mixtures.

The combination of HEPA efficient filtration and gas backfill purge effectively prevents  secondary pollution. 

The treatment is characterized by rapid and consistent performance, with high  efficiency and good repeatability. 

 The sample processing temperature is maintained at a low level, ensuring the absence  of thermal damage and oxidation. 

The safety protection mechanism automatically cuts off electrical power when the  chamber door is open. Machine running, stop prompt.

Working Principle of plasma stripper 

The principle of plasma stripper is analogous to that of plasma cleaning, as it primarily  removes photoresist through the reaction between oxygen atom nuclei and the organic  hydrocarbon matter in a plasma environment. Radio frequency or microwave energy ionizes  process gas oxygen into oxygen atoms, which then chemically react with the photoresist to  produce carbon monoxide, carbon dioxide, water, etc., before being vacuumed away by a  pump for complete removal. Addition of nitrogen or hydrogen to the reaction gas can  enhance performance and residue removal. Compared to traditional chemical methods for  removing photoresist, plasma stripping offers higher efficiency and less environmental  pollution.

Applications

CIF's plasma strippers boast a high price-performance ratio, low operational costs, and ease  of maintenance, making them well-received by universities, scientific research institutes, and  microelectronics and semiconductor laboratories for their processing capabilities. - The removal of sacrificial layer during the manufacturing process of circuit boards,  epitaxial sheets, chips, epoxy resins, and MEMS. - The removal of photoresist from the substrate can be performed either before or after  dry etching or wet etching processes, such as polymer stripping, metal stripping, and  mask material removal. - Pretreatment of the wafer surface.

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