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CIF focuses on material surface treatment technology, providing customers with professional instrument equipment and application process solutions for cleaning, debonding, etching, coating and other aspects!
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CIF Remote SEM Plasma Cleaner (CIF-SEM)

Category: Plasma Cleaners

Product Parameters

The SEM Plasma Cleaner developed by CIF is specifically designed for the removal of hydrocarbons in SEM or FIB electron microscope chambers. This advanced system utilizes remote plasma sources to effectively clean samples with high efficiency and minimal damage caused by plasma bombardment.
Attribute
Product Name
Model
Manufacturer Nature
Visits
Time
Details
CIF Remote SEM Plasma Cleaner (CIF-SEM)
CIF-SEM
Manufacturer
696次
2024-03-19

Products Details

Function & Features

Intelligent interactive interface: Featuring a 7-inch color touchscreen, the system  supports bilingual operation in Chinese and English. It enables real-time monitoring and  automatic adjustment of process parameters. With 20 pre-programmed recipes, the  system allows for efficient storage and traceability of process data. 

Reliable control system: It adopts PLC for full-process control and supports both  manual and automatic operation modes to ensure a stable and reliable cleaning  process. 

Bidirectional intelligent vacuum control: The system can precisely control the vacuum  degree through two modes of adjusting gas flow or chamber pressure, providing more  flexible and intelligent process control to meet diverse precision processing  requirements. 

Precise gas management: Equipped with mass flowmeters, it supports various gas  sources such as oxygen, argon, nitrogen, hydrogen and mixed gases, with high control  accuracy.

Remote plasma cleaning source: Physically isolates the plasma from the sample,  effectively reducing direct bombardment. 

High-efficiency and rapid cleaning: Significantly shorten the pretreatment time and  quickly remove contaminants such as hydrocarbons. 

Extremely low sample damage: The optimized process can protect the original  structure and surface morphology of the sample to the greatest extent.

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