Surface etching - Plasma etching machine

RIE Reactive ion etcher 

       The RIE reactive ion etcher from CIF utilizes the RIE reactive ion induced excitation mode to  achieve anisotropic microstructure etching on material surfaces. It has well accepted by universities, scientific research institutes, microelectronics, and semiconductor enterprises  due to its competitive pricing, low operational costs, easy maintenance, as well as fast and  efficient processing capabilities. 

CIF’s RIE reactive ion etcher is ideal for media etching, silicon etching, metal etching on  various substrates with complex geometric shapes, including: 

 - Dielectric materials (SiO2, SiNx, etc.) 

 - Silicon-based materials (Si, a-Si, poly Si) 

 - III-V materials (GaAs, InP, GaN, etc.)  

- Metal sputtering (Au, Pt, Ti, Ta, W, etc.)  

- Diamond-like carbon (DLC)

Applications 

Plasma etcher is mainly used in the in the research and production of microelectronic chips,  solar cells, biochips, displays, optics, telecommunications, microcomputers, and other  related industries.

Function & Features

 The 7-inch color touch screen provides an interactive operation interface that  automatically controls and monitors processing parameters and status. It has the  capability to store and trace up to 20 protocols & process data. Cover Plate Gas distributor Gas dispersion disc Wafer Window sight glass Vacuuming Nozzle Chamber wall Focusing ring Electrostatic chuck Insulation ring

 The PLC industrial control computer oversees the entire process of photoresist removal,  offering two operational modes: manual and automatic. 

 The vacuum chamber and pipeline are constructed from high-quality 316 stainless steel,  renowned for its exceptional corrosion resistance and absence of pollutants.

 Anti-corrosion digital flowmeter is used for gas control. Dual gas paths are provided as  a standard feature to ensure optimal gas uniformity. The compatible gases include  oxygen, argon, nitrogen, carbon tetrafluoride, hydrogen, and gas mixtures. 

 The plasma cleaning machine adopts a shower-type porous air intake to enhance the  uniformity of single-hole air intake of traditional plasma cleaning machines. 

 The HEPA filtration system and gas backfill purge effectively prevent secondary  pollution. 

 The 60° tilting operation panel is designed in accordance with the principles of  ergonomics, ensuring ease of operation. 

 The vacuum chamber features an overhead top loading design with a press down  hinge switch. 

 The overhead 360° sample stage is designed with ergonomic features and facilitates  easy loading of samples. 

 The spacious working area is capable of processing silicon wafers with a maximum  diameter of 200mm. 

 The safety protection mechanism automatically cuts off electrical power when the  chamber door is opened.