Surface Etching - Plasma Etching System

                                                RIE200                                                                              RIE200plus

Working principle

Plasma etching machines, also referred to as dry etching systems, are critical tools in semiconductor fabrication. These systems     operate by utilizing plasma to selectively remove materials, thereby enabling the precise transfer of mask patterns onto the substrate surface.

Within a vacuum-sealed reaction chamber, specific process gases-such as CF4 and Cl2- are introduced and ionized via radio frequency (RF) power to generate reactive plasma. The resulting plasma contains active free radicals that engage in chemical reactions with the material surface, while high-energy ions, accelerated under an electric field, induce physical sputtering. This combined physicochemical mechanism facilitates highly anisotropic and accurate pattern etching at the micro- and nanoscale.

By precisely regulating key process parameters-including RF power, gas composition and flow rate, chamber pressure, temperature, and process duration-the etch rate, selectivity, and profile morphology for various materials-such as dielectrics, silicon, and metals-can be effectively controlled, thereby satisfying the stringent and diverse demands of advanced micro- and nano-fabrication processes.

Applications

Plasma etcher system is suitable for precision cleaning, surface activation, and mild etching processes of wafers, substrates, devices, and related components in the fields of semiconductors, microelectronics, MEMS, and advanced packaging. It is designed to accommodate both the flexibility required in research and development and the process stability demanded in production environments.

Function & Features

Intelligent Control and Operation

1. The system is equipped with a 7-inch color touchscreen interface, supporting both Chinese and English languages, enabling real-time monitoring and precise automatic control of process parameters.

2. It integrates 20 pre-programmed process recipes and supports comprehensive data storage and traceability functions, ensuring high repeatability and consistency across processing cycles.

3. Powered by a PLC-based industrial control system, it offers dual operation modes- manual and automatic-delivering stable, reliable, and highly controllable process performance.

4. The control panel features an ergonomically designed 60° tilt angle, optimizing visibility and operational convenience.

Chamber and Vacuum System

1. The vacuum chamber and all associated piping are constructed from 316 stainless steel, offering superior corrosion resistance and maintaining a contamination-free processing environment.

2. A top-opening lid with  a downward-actuated hinge mechanism ensures smooth opening and closing operations, along with a secure and reliable sealing performance.

Gas Delivery and Distribution

1. Standard configuration includes two high-precision, corrosion-resistant digital mass flow controllers (MFCs), compatible with various process gases including oxygen, argon, nitrogen, carbon tetrafluoride, and hydrogen; optional multi-gas configurations are available for expanded application needs. achieving uniform gas distribution within the chamber and significantly enhancing process uniformity and consistency.

Sample Handling and Safety

1. The  system  incorporates  an  upper-mounted  sample  stage  that  enables  360° horizontal access for convenient and ergonomic sample loading and unloading.

2. It provides a large effective processing area, accommodating wafers or silicon substrates up to 200 mm (8 inches) in diameter.

3. Equipped with HEPA high-efficiency filtration and gas back-blowing functionality, it effectively prevents particle-related secondary contamination.

4. Integrated safety interlock mechanisms automatically cut off power upon chamber door opening, while a visible status indicator light clearly displays system operation conditions, ensuring safe and reliable operation.