中文

中文
English
400-6505-735

Products

CIF focuses on material surface treatment technology, providing customers with professional instrument equipment and application process solutions for cleaning, debonding, etching, coating and other aspects!
Home  -  Products  -  Photoresist Removal > Plasma Stripper

Plasma Stripper

Product Parameters

Attribute
Product Name
Model
Manufacturer Nature
Visits
Time
Details
Plasma Stripper
SPB4/6/8
Manufacturer
13次
2026-08-20

Products Details

CIF's plasma stripping systems utilize Inductively Coupled Plasma (ICP) excitation technology to deliver isotropic uniform plasma generation, enabling gentle and efficient treatment of various substrates and workpieces with complex 3D irregular structures. It can strip photoresist efficiently and remove MEMS sacrificial layers, while performing surface cleaning and activation for wafers, chips, epitaxial wafers and circuit boards. Suitable for university research labs, semiconductor and microelectronics laboratories, it serves as core process equipment for semiconductor and MEMS fabrication.



Applications

CIF's plasma strippers offer a high price-performance ratio, low operating costs, and easy maintenance, making them popular in universities, research institutes, and microelectronics and semiconductor labs for their processing capabilities.

Photoresist removal. Stripping of polymers, metals, and mask materials prior to or following dry and wet etching processes;

Surface pretreatment. Cleaning and surface activation of wafers, chips, epitaxial wafers, printed circuit boards, and related substrates;

Specialized process cleaning. Removal of sacrificial layers in MEMS fabrication and elimination of organic contaminants, such as epoxy residues, from material surfaces.

c91eb85b3c102a058eeeb4341472fe1d.png 


 

Working Principle of Plasma Stripper

The principle of plasma stripper is to utilize the high reactivity of plasma to achieve efficient material removal. The operational process involves introducing process gases, such as oxygen, into a vacuum reaction chamber, where they are ionized by radio frequency or microwave energy to generate plasma containing highly reactive species, including oxygen radicals. These reactive species initiate oxidation reactions with photoresist-primarily composed of hydrocarbon-based organic compounds-converting it into volatile byproducts such as carbon monoxide, carbon dioxide, and water vapor. These gaseous products are subsequently removed via the vacuum system, enabling complete and residue-free cleaning. To further enhance process performance, nitrogen or hydrogen can be introduced into the gas mixture to improve the removal efficiency of specific residual materials. Compared to conventional wet chemical photoresist removal techniques, this dry etching method offers superior photoresist removal efficiency while eliminating the need for large quantities of chemical solvents, thus providing significant environmental and safety advantages.

 

Function & Features

Intelligent Control and Humanized Operation

± The system is equipped with a 7-inch color touchscreen and a bilingual interactive interface available in both Chinese and English, enabling intuitive and user-friendly operation.

± The entire photoresist removal process is managed by a PLC-based industrial control system, supporting both manual and fully automatic operating modes.

± It features 20 programmable process recipes with capabilities for process data storage, export, and full traceability, ensuring compliance with quality management requirements.

Precision Process and Gas Control System

± Intelligent vacuum control enables precise regulation of vacuum levels through adjustment of gas flow or chamber pressure, delivering flexible and adaptive process control.

± The system is equipped with corrosion-resistant mass flow controllers to ensure high- accuracy gas delivery. A dual-gas configuration is provided as standard, with optional multi-gas configurations available to support various process gases, including oxygen, argon, nitrogen, carbon tetrafluoride, and hydrogen.

± The uniform gas inlet design employs a multi-channel distribution system, effectively overcoming the non-uniform gas dispersion commonly associated with traditional single-channel inlets, thereby ensuring consistent and homogeneous processing results.

± Cleanliness Assurance.

± A HEPA high-efficiency filtration system, combined with gas backfilling and purging functions, is integrated to effectively prevent secondary contamination and maintain a clean processing environment.

Core Structure and Materials

± The vacuum chamber is constructed from high-purity quartz, while the entire vacuum piping system is fabricated from 316 stainless steel, offering excellent corrosion resistance and ensuring a pollution-free process environment.

± Optional quartz boats are available, making the system particularly suitable for wafer photoresist removal applications.

Safety Protection

± Multiple safety mechanisms are incorporated, including automatic power cutoff upon chamber door opening and controlled pressure release functionality.

± Real-time operational status indicators are provided for both running and standby states, ensuring personnel safety and protection of processed samples.

 

Technical Specification

Model

SPB4

SPB6

SPB8

Chamber Size, mm

D250xΦ160mm

D300xΦ210mm

D250xΦ250mm

Chamber Volume

5L

10L

12L

Chamber Material

Quartz

Quartz

Quartz

RF Frequency

13.56MHz

13.56MHz

13.56MHz

Matcher

Auto Matching

Auto Matching

Auto Matching

Plasma Excitation

Inductive coupling(ICP)

Inductive coupling (ICP)

Inductive coupling (ICP)

RF Power

10-300W adjustable (Optional: 10-600W)

10-300W adjustable (Optional: 10-600W)

10-300W adjustable (Optional: 10-600W)

Max. sample size

Φ150m (4 inch)

Φ200m (8 inch)

Φ250m (8 inch)

Gas Control

Standard: 1 mass flow meter (MFC) (Range: 0-500 SCCM, adjustable);

Optional: 2 mass flowmeters (MFC).

Process Gas

Ar, N2, O2, H2 or other mixed gases (optional)

Time Setting

1–99 min 59 sec.

Vacuum Pump

~8 m³/h

~8 m³/h

~16 m³/h

Gas Stable Time

1 min

1 min

1 min

Ultimate Vacuum

≤1Pa

≤1Pa

≤1Pa

Product Size, mm

L615xW550xH465

L675xW590xH645

L745xW590xH695

Power Supply

AC220V 50/60Hz, 624/954W. All wiring shall comply with the relevant provisions of national standards, including the Code for Design of Low-Voltage Electrical Installations (GB 50054-95) and the Code for Design of Low-Voltage Distribution Equipment and Circuits.

Net Weight

55kg

72kg

75kg


Recommended Products
400-6505-735
  • CIF WeChat Service Account

  • CIF Tiktok

Copyright © CIF (Beijing) Tech Co., Ltd. Al Rights Reseved    ICP:

Add WeChat

TEL:400-6505-735

WeChat Service Account